Preparation Of Poly-Si Thin Films By Aluminium Induced Crystallization Of Glass/Al/a-Si:H With Differently Formed Interfacial Aluminum Oxide Layers

Details Preparation Of Poly-Si Thin Films By Aluminium Induced Crystallization Of Glass/Al/a-Si:H With Differently Formed Interfacial Aluminum Oxide Layers Preparation Of Poly-Si Thin Films By Aluminium Induced Crystallization Of Glass/Al/a-Si:H With Differently Formed Interfacial Aluminum Oxide Layers

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..758g&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 758-758 (2007).

Physics

Growth From Solid Phases, Thin Film Structure And Morphology

Scientific paper

Poly-Si films were prepared by Aluminium Induced Crystallization (AIC)
of glass/Al/a-Si:H stacks. It was found that using evaporated at room
temperature Al films or sputtered at 300 °C is more favorable for
larger grain formation.

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