Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes

Details Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes

2009-08-16

arxiv.org/abs/0908.2230v1

Appl. Phys. Lett. 95, 091103 (2009)

Physics

Quantum Physics

3 pages and a few lines, 5 figures, 1 table. Accepted by Applied Physics Letters

Scientific paper

10.1063/1.3223576

We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes (SPADs), combining aspects of both sine gating and self-differencing techniques. At a gating frequency of 921 MHz and temperature of -30 $^{\circ}$C we achieve: a detection efficiency of 9.3 %, a dark count probability of 2.8$\times10^{-6}$ ns$^{-1}$, while the afterpulse probability is 1.6$\times10^{-4}$ ns$^{-1}$, with a 10 ns "count-off time" setting. In principle, the maximum count rate of the SPAD can approach 100 MHz, which can significantly improve the performance for diverse applications.

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