Polycrystalline SiGe technology for uncooled microbolometer arrays

Details Polycrystalline SiGe technology for uncooled microbolometer arrays Polycrystalline SiGe technology for uncooled microbolometer arrays

Dec 2003

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2003spie.5209..107l&link_type=abstract

Materials for Infrared Detectors III. Edited by Longshore, Randolph E.; Sivananthan, Sivalingam. Proceedings of the SPIE, Volum

Physics

Scientific paper

The technology for the small-size focal plane arrays and linear arrays of polycrystalline SiGe microbolometers is developed at IMEC and successfully transferred to its industrial partner XenICs. A NETD of about 100 mK is achievable at the readout level on 14×14 and 200×1 arrays with 50 60 μm pixel pitch at a time constant of 20 25 ms. The design of pixels provides very precise tuning of the infrared resonant cavity. The resistance and TCR nonuniformity with σ/μ better than 0.2% combined with about 1% noise nonuniformity and 100% pixel operability are demonstrated. The first lot of arrays has been characterized, the arrays have been assembled with hybrid readout chips, supplied with the dedicated evaluation board and a software, and the results of system testing are being reported. The possibility to use the SiGe arrays as infrared emitters has been investigated for the first time and the results are presented as well.

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