Physics
Scientific paper
Jun 1975
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1975phrvl..34.1441d&link_type=ejournal
Physical Review Letters, Volume 34, Issue 23, June 9, 1975, pp.1441-1444
Physics
15
Scientific paper
Not Available
Davies Jackie A.
Foti G.
Howe L. M.
Mitchell Brian J.
Winterbon K. B.
No associations
LandOfFree
Polyatomic-ion implanation damage in silicon does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Polyatomic-ion implanation damage in silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polyatomic-ion implanation damage in silicon will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-751276