Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC

Details Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC

2010-10-20

arxiv.org/abs/1010.4080v2

Physics

Plasma Physics

11 pages and 10 figures. Submitted to Nano-Letters

Scientific paper

We show ~10x polariton-enhanced infrared reflectivity of epitaxial graphene on 4H-SiC, in SiC's restrahlen band (8-10um). By fitting measurements to theory, we extract the thickness, N, in monolayers (ML), momentum scattering time, Fermi level position of graphene and estimate carrier mobility. By showing that 1/root(ns), the carrier concentration/ML, we argue that scattering is dominated by short-range interactions at the SiC/graphene interface. Polariton formation finds application in near-field optical devices such as superlenses.

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