Plasmonic modulator based on gain-assisted metal-semiconductor-metal waveguide

Physics – Optics

Scientific paper

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Scientific paper

We analyze metal-semiconductor-metal (MSM) waveguides with an InGaAsP-based active material layers as ultra-compact plasmonic modulators. Bulk material, quantum wells and quantum dots are considered as the sandwiched core. The design is improved by close-to-reality layout, including, in particular, n- and p-doped layers and barriers. The effective propagation constants in the MSM waveguides are calculated numerically. Their changes in the switching process are considered as figures of merit. Dependences on the waveguide core size and gain values of various active materials are studied.

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