Planar Ion Trap Geometry for Microfabrication

Details Planar Ion Trap Geometry for Microfabrication Planar Ion Trap Geometry for Microfabrication

2004-01-09

arxiv.org/abs/quant-ph/0401047v1

Physics

Quantum Physics

14 pages, 16 figures

Scientific paper

10.1007/s00340-004-1414-9

We describe a novel high aspect ratio radiofrequency linear ion trap geometry that is amenable to modern microfabrication techniques. The ion trap electrode structure consists of a pair of stacked conducting cantilevers resulting in confining fields that take the form of fringe fields from parallel plate capacitors. The confining potentials are modeled both analytically and numerically. This ion trap geometry may form the basis for large scale quantum computers or parallel quadrupole mass spectrometers. PACS: 39.25.+k, 03.67.Lx, 07.75.+h, 07.10+Cm

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