Planar Channeling of 855 MeV Electrons in Silicon: Monte-Carlo Simulations

Details Planar Channeling of 855 MeV Electrons in Silicon: Monte-Carlo Simulations Planar Channeling of 855 MeV Electrons in Silicon: Monte-Carlo Simulations

2010-08-10

arxiv.org/abs/1008.1707v2

J.Phys.B.At.Mol.Opt.Phys.44:075208,2011

Physics

Accelerator Physics

22 pages, 10 figures. Version 2: the article is considerably extended, comparison to an experiment is added

Scientific paper

10.1088/0953-4075/44/7/075208

A new Monte Carlo code for the simulation of the channeling of ultrarelativistic charged projectiles in single crystals is presented. A detailed description of the underlying physical model and the computation algorithm is given. First results obtained with the code for the channeling of 855 MeV electrons in Silicon crystal are presented. The dechanneling lengths for (100), (110) and (111) crystallographic planes are estimated. In order to verify the code, the dependence of the intensity of the channeling radiation on the crystal dimension along the beam direction is calculated. A good agreement of the obtained results with recent experimental data is observed.

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