Photoemission study of S adsorption on GaAs (0 0 1)

Details Photoemission study of S adsorption on GaAs (0 0 1) Photoemission study of S adsorption on GaAs (0 0 1)

Apr 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005njph....7..115s&link_type=abstract

New Journal of Physics, Volume 7, Issue 1, pp. 115 (2005).

Physics

Scientific paper

Angle-resolved photoemission spectra have been calculated with the one-step model for S/GaAs(0 0 1) and compared with experimental distributions. The data are analysed in terms of the ideal 1 × 1 and, furthermore, of the reconstructed 2 × 6 surface which is assumed to be closest to the experimentally realized structure. Emissions are characterized by electronic structure terms such as energy bands and orbital composition, though partly also by geometric properties. In particular, the determination of the second layer as consisting of Ga atoms has been achieved because of the distinct differences in the theoretical spectra with S Ga and those with S As bonds.

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