Photoelectric, structural and mechanical properties of iso-valency replaced n-Hg0.79Cd0.21Te single crystals

Details Photoelectric, structural and mechanical properties of iso-valency replaced n-Hg0.79Cd0.21Te single crystals Photoelectric, structural and mechanical properties of iso-valency replaced n-Hg0.79Cd0.21Te single crystals

Sep 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5957..282k&link_type=abstract

Integrated Optics: Theory and Applications. Edited by Pustelny, Tadeusz; Lambeck, Paul V.; Gorecki, Christophe. Proceedings of

Physics

Optics

Scientific paper

Effect of iso-valency doping with S, Se or Zn dopants on Hg1-xCdxTe mechanical, structural and photoelectric properties is considered. It was revealed that iso-valency doping reduced the etch pit density and increased the microhardness in Hg1-xCdxTe single crystals. Such doping also improved the photoelectric properties, especially increased the excess carrier lifetime. Taking into account the value of equilibrium concentration of S, Se and Zn iso-valency dopants in Hg1-xCdxTe single crystals it was concluded that the most suitable iso-valency dopant is Se.

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