Photoelectric memory in GaAs/AlGaAs quantum well infrared photodetectors

Details Photoelectric memory in GaAs/AlGaAs quantum well infrared photodetectors Photoelectric memory in GaAs/AlGaAs quantum well infrared photodetectors

Jun 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2746..162d&link_type=abstract

Proc. SPIE Vol. 2746, p. 162-169, Infrared Detectors and Focal Plane Arrays IV, Eustace L. Dereniak; Robert E. Sampson; Eds.

Physics

Scientific paper

GaAs/Al(subscript x)Ga(subscript 1-x)As quantum well infrared photodetectors grown by molecular-beam epitaxy with x varied from 0.26 up to 0.43 are investigated. The huge increase of dark current (by 2 - 3 orders) in photodetectors with x approximately equals 0.4 after illumination of samples by optical radiation ((lambda) < 1.3 micrometers ) at lowered temperatures and the subsequent slow dark current relaxation are observed. The model of barriers with a local sag potential increasing tunnel current is proposed. The value of the sag potential is increased at optical ionization of unintentional deep levels in the barrier and is decreased at the subsequent capture of electrons from conduction band on deep levels. Analysis of the dark current kinetics allowed to determine some parameters of these deep levels.

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