Photoconductivity in lateral conduction self-assembled Ge/Si quantum dot infrared photodetectors

Details Photoconductivity in lateral conduction self-assembled Ge/Si quantum dot infrared photodetectors Photoconductivity in lateral conduction self-assembled Ge/Si quantum dot infrared photodetectors

Apr 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5726..146l&link_type=abstract

Semiconductor Photodetectors II. Edited by Cohen, Marshall J.; Dereniak, Eustace L. Proceedings of the SPIE, Volume 5726, pp

Physics

1

Scientific paper

We have investigated the photocurrent spectra of lateral conduction self-assembled Ge/Si quantum dots (QDs) infrared photodetector structure. We have observed a broad mid-infrared photocurrent spectrum in photon energy range of 120-400 meV (λ~3-10 μm) due to bound-to-bound as well as bound-to-continuum intersubband transition of normal incidence radiation in the valence band of self-assembled Ge QDs and subsequent lateral transport of photoexcited carriers in the Si/SiGe two-dimensional channel. The peak responsivity was as high as 134 mA/W at photon energy of 240 meV (λ~5.2 μm) at T=10 K and Vb=8 V.

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