Photo CVD system for silicon nitride film

Details Photo CVD system for silicon nitride film Photo CVD system for silicon nitride film

Jan 1986

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1986jemat..15...27n&link_type=abstract

Journal of Electronic Materials, Volume 15, Issue 1, pp.27-30

Physics

1

Photo Cvd, Direct Photolysis, 185 Nm Ultraviolet Light, Silicon Nitride Film, Optical Window Wall Deposition Prevention

Scientific paper

An ultraviolet light excitation photo CVD system for silicon nitride film deposition, in which the use of mercury photo-sensitizer and the undesirable wall deposition onto the optical window inside are eliminated, has been developed. The elimination of the use of mercury sensitizer is achieved by employing direct photolysis of SiH4/NH3 gas mixture, using 185 nm light emitted from a low pressure mercury lamp. The wall deposition prevention is achieved by inserting an optically transparent “separator plate” with a number of through-holes on its plane area underneath the optical window and by draining inert gas into the reaction chamber through this “separator plate.” With this system, silicon nitride films have been deposited without marked degradation of deposition rate, keeping a reasonable deposition rate of about 40 A/minute. The inert gas used for wall deposition prevention has no influence on the properties of deposited films.

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