Photo-Chemical Vapor Deposition of Silicon Nitride Film by Direct Photolysis

Details Photo-Chemical Vapor Deposition of Silicon Nitride Film by Direct Photolysis Photo-Chemical Vapor Deposition of Silicon Nitride Film by Direct Photolysis

Dec 1983

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1983jajap..22l.792n&link_type=abstract

Japanese Journal of Applied Physics, Volume 22, Issue 12, pp. L792-L794 (1983).

Physics

28

Scientific paper

Silicon nitride film was deposited onto a silicon substrate using a photo-CVD (chemical vapor deposition) technique, which is based on direct photolysis of SiH4/NH3 gas mixture by 185 nm ultraviolet light from a mercury lamp. Deposition rate of 10 nm/minute was achieved without using any photo-sensitizer such as mercury vapor with a photo-CVD system developed for this direct photolysis. Infrared absorption spectrum, Auger spectrum, refractive index and etch rate in buffered HF solution were measured on the deposited film. It was revealed that the film contains 1.4× 1022 cm-3 of hydrogen atoms and is nitrogen-rich in its composition. Breakdown field strength, leakage current and surface charge density characteristics were superior to those of conventional plasma-CVD silicon nitride film.

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