Performance of novel silicon n-in-p planar Pixel Sensors

Details Performance of novel silicon n-in-p planar Pixel Sensors Performance of novel silicon n-in-p planar Pixel Sensors

2011-12-22

arxiv.org/abs/1112.5395v2

Nucl. Instrum. Meth. A679 (2012) 29

Physics

Instrumentation and Detectors

Preprint submitted to Nuclear Instruments and Methods A. 7 pages, 13 figures

Scientific paper

10.1016/j.nima.2012.03.029

The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. The n-in-p modules presented here are composed of pixel sensors produced by CiS connected by bump-bonding to the ATLAS readout chip FE-I3. The characterization of these devices has been performed before and after irradiation up to a fluence of 5 x 10**15 1 MeV neq cm-2 . Charge collection measurements carried out with radioactive sources have proven the functioning of this technology up to these particle fluences. First results from beam test data with a 120 GeV/c pion beam at the CERN-SPS are also discussed, demonstrating a high tracking efficiency of (98.6 \pm 0.3)% and a high collected charge of about 10 ke for a device irradiated at the maximum fluence and biased at 1 kV.

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