Performance of a TiN-coated monolithic silicon pin-diode array under mechanical stress

Details Performance of a TiN-coated monolithic silicon pin-diode array under mechanical stress Performance of a TiN-coated monolithic silicon pin-diode array under mechanical stress

2012-02-01

arxiv.org/abs/1202.0320v1

Nuclear Inst. and Methods in Physics Research, A (2012), pp. 46-50

Physics

Instrumentation and Detectors

13 pages, 7 figures

Scientific paper

10.1016/j.nima.2012.01.033

The Karlsruhe Tritium Neutrino Experiment (KATRIN) will detect tritium beta- decay electrons that pass through its electromagnetic spectrometer with a highly- segmented monolithic silicon pin-diode focal-plane detector (FPD). This pin-diode array will be on a single piece of 500-{\mu}m-thick silicon, with contact between titanium nitride (TiN) coated detector pixels and front-end electronics made by spring-loaded pogo pins. The pogo pins will exert a total force of up to 50N on the detector, deforming it and resulting in mechanical stress up to 50 MPa in the silicon bulk. We have evaluated a prototype pin-diode array with a pogo-pin connection scheme similar to the KATRIN FPD. We find that pogo pins make good electrical contact to TiN and observe no effects on detector resolution or reverse-bias leakage current which can be attributed to mechanical stress.

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