Parametric Amplification of Millimeter Waves Using Wafer Diodes: Results, Potentials, and Limitations (Correspondence)

Details Parametric Amplification of Millimeter Waves Using Wafer Diodes: Results, Potentials, and Limitations (Correspondence) Parametric Amplification of Millimeter Waves Using Wafer Diodes: Results, Potentials, and Limitations (Correspondence)

Dec 1970

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1970itmtt..18.1173e&link_type=abstract

IEEE Transactions on Microwave Theory and Techniques, vol. 18, issue 12, pp. 1173-1175

Physics

2

Scientific paper

Theoretical considerations and measurements on wafer varactors using Schottky-Barrier junctions show their feasibility for millimeter-wave and possibly low submilliieter-wave frequencies. A degenerate parametric amplifier is described which can be electronically tuned over a wide range (Δ∮=2 GHz) around 24 GHz and reaches a very low noise temperature (<70°K) when cooled.

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