ORION semiconductor optical detectors: research and development

Details ORION semiconductor optical detectors: research and development ORION semiconductor optical detectors: research and development

Dec 1991

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991spie.1540..412k&link_type=abstract

Proc. SPIE Vol. 1540, p. 412-423, Infrared Technology XVII, Bjorn F. Andresen; Marija S. Scholl; Irving J. Spiro; Eds.

Computer Science

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Scientific paper

Experimental and theoretical results of photosensitive semiconductor structures as well as the main developments of modern semiconductor photoresistors, photodiodes, including injection ones, based on polycrystalline and monocrystalline materials, multilayer structures and superlattices for visual far infrared spectral range are presented. Performance of multielement photodetectors based on lead chalcogenides, germanium and silicon, A(superscript III)B(superscript V) compounds, and CMT structures are described.

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