Origin of the surface-state band-splitting in ultrathin Bi films: from a Rashba effect to a parity effect

Details Origin of the surface-state band-splitting in ultrathin Bi films: from a Rashba effect to a parity effect Origin of the surface-state band-splitting in ultrathin Bi films: from a Rashba effect to a parity effect

Aug 2008

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008njph...10h3038h&link_type=abstract

New Journal of Physics, Volume 10, Issue 8, pp. 083038 (2008).

Physics

12

Scientific paper

Following our previous work (Hirahara T et al 2007 Phys. Rev. B 76 153305), we have performed spin- and angle-resolved photoemission measurements at ~120 K on ultrathin Bi films grown on a Si substrate, focusing on the split surface-state bands near the Fermi level. We found clear experimental evidence that these states show Rashba-type spin-split behavior near \bar{\Gamma} , but the splitting is lost near \barM where they overlap with the bulk band projection. This can be explained as a change in the origin of the splitting from a Rashba effect to a parity effect as revealed by ab initio calculations.

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