Physics
Scientific paper
May 2002
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4650..207l&link_type=abstract
Proc. SPIE Vol. 4650, p. 207-212, Photodetector Materials and Devices VII, Gail J. Brown; Manijeh Razeghi; Eds.
Physics
Scientific paper
Positron-annihilation measurements and nuclear reaction analysis (utilizing the 14N(d, p)15N and 14N(d, a)12C reactions) in conjunction with Rutherford backscattering spectrometry in the channeling geometry were used to study the defects in as-grown Ga(In)NAs materials grown by molecular beam epitaxy (MBE) using a radio-frequency (rf) plasma nitrogen source. Our data unambiguously show the existence of vacancy-type defects, which we attribute to Ga vacancies, and nitrogen interstitials in the as-grown Nitride-Arsenide epilayers. These point defects, we believe, are responsible for the low luminescence efficiency of as-grown Ga(In)NAs materials and the enhanced diffusion process during annealing.
Ahlgren Tommy
Dekker James
Li Wangrong
Pessa Markus
No associations
LandOfFree
Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-833824