Orientation dependence of cascade processes in a silicon crystal

Details Orientation dependence of cascade processes in a silicon crystal Orientation dependence of cascade processes in a silicon crystal

Nov 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989pzetf..50..395b&link_type=abstract

Pis'ma v Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki (ISSN 0370-274X), vol. 50, Nov. 10, 1989, p. 395-397. In Russian.

Physics

Electron Photon Cascades, Gamma Rays, Silicon, Single Crystals, Cerenkov Counters, Gamma Ray Telescopes, Nuclear Reactions

Scientific paper

The paper presents the orientation dependences of signals from a Cerenkov counter which registers 3-15 GeV gamma-ray cascades leaving a silicon crystal. The directivity of cascade processes in Si crystals is observed in a wide range of primary gamma-ray energy. This has important implications for the design of gamma-ray telescopes, as well as for the development of directional spectrometers for determining the energy of gamma rays and their generation peaks in nuclear reactions.

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