Optimization of the MBE growth of Hg1-xCdxTe for advanced infrared applications

Details Optimization of the MBE growth of Hg1-xCdxTe for advanced infrared applications Optimization of the MBE growth of Hg1-xCdxTe for advanced infrared applications

Jul 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3379..572v&link_type=abstract

Proc. SPIE Vol. 3379, p. 572-576, Infrared Detectors and Focal Plane Arrays V, Eustace L. Dereniak; Robert E. Sampson; Eds.

Physics

Scientific paper

Hg(subscript 1-x)Cd(subscript x)Te films with x values varying from 0.2 to 0.23 have been grown and characterized. N-type carrier concentrations in the range of 1 X 10(superscript 15) cm(superscript -3) to 3 X 10(superscript 15) cm(superscript -3) have been obtained. Hall effect measurements before and after anneals at 250 degrees Celsius have led to the evaluation of the Hg vacancy concentration in the samples. Dislocation density less than 10(superscript 5) cm(superscript -2) and X-ray rocking curve width less than 25 arc- secs measured in some of the films attests to the excellent crystallinity of the material.

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