Physics – Optics
Scientific paper
2005-03-17
Appl. Phys.Letts, 75, 22, pp. 3443-3445 (Nov. 1999)
Physics
Optics
11 pages
Scientific paper
We report electro-absorption modulation of light at around 1550 nm in a unipolar InGaAlAs optical waveguide containing a InGaAs/AlAs double-barrier resonant tunneling diode (DB-RTD). The RTD peak-to-valley transition increases the electric field across the waveguide, which shifts the core material absorption band-edge to longer wavelengths via the Franz-Keldysh effect, thus changing the light-guiding characteristics of the waveguide. Low-frequency characterisation of a device shows modulation up to 28 dB at 1565 nm. When dc biased close to the negative differential conductance (NDC) region, the RTD optical waveguide behaves as an electro-absorption modulator integrated with a wide bandwidth electrical amplifier, offering a potential advantage over conventional pn modulators.
Boyd A. R.
Figueiredo J. M. L.
Ironside C. N.
Leite A. M. P.
McMeekin S. G.
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