One-dimensional features of In(Ga)As/GaAs dot chain structures with changeable interdot coupling

Details One-dimensional features of In(Ga)As/GaAs dot chain structures with changeable interdot coupling One-dimensional features of In(Ga)As/GaAs dot chain structures with changeable interdot coupling

Apr 2009

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2009njph...11d3022m&link_type=abstract

New Journal of Physics, Volume 11, Issue 4, pp. 043022 (2009).

Physics

1

Scientific paper

In this paper, In(Ga)As/GaAs quantum dot chain structures with adjustable interdot coupling are studied by means of atomic force microscopy, excitation power density-, temperature-dependent- and time-resolved photoluminescence (PL) spectroscopy. According to the growth parameters, samples in this set model the transition from a 0D to a 1D system. It is shown that an interval of lattice temperatures exists where exciton dynamics is typical for the 1D system. In this temperature interval, the radiative decay time depends linearly on \sqrt T in all the samples. The exciton dynamics is substantially affected by in-chain interdot distances that determine the interdot coupling and define the hopping character of the exciton thermal relaxation in In(Ga)As/GaAs dot chain structures.

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