On-chip parametric amplification with 26.5~dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides

Details On-chip parametric amplification with 26.5~dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides On-chip parametric amplification with 26.5~dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides

2011-02-04

arxiv.org/abs/1102.1026v1

Physics

Optics

3 pages, 2 figures, accepted to Optics Letters

Scientific paper

We present the first study of parametric amplification in hydrogenated
amorphous silicon waveguides. Broadband on/off amplification up to 26.5~dB at
telecom wavelength is reported. Measured nonlinear parameter is
770~$\textrm{W}^{-1} \textrm{m}^{-1}$, nonlinear absorption 28~$\textrm{W}^{-1}
\textrm{m}^{-1}$, bandgap $1.61$~eV.

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