Observation of Hg diffusion in CdTe by means of 40-MeV O(5+) ion backscattering

Details Observation of Hg diffusion in CdTe by means of 40-MeV O(5+) ion backscattering Observation of Hg diffusion in CdTe by means of 40-MeV O(5+) ion backscattering

May 1984

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1984apphl..44..996t&link_type=abstract

Applied Physics Letters (ISSN 0003-6951), vol. 44, May 15, 1984, p. 996-998.

Physics

13

Backscattering, Diffusion Coefficient, Liquid Phase Epitaxy, Mercury Cadmium Tellurides, Semiconductors (Materials), Atom Concentration, Cadmium Tellurides, Surface Diffusion

Scientific paper

The ion backscattering method is used to measure the distribution of the Hg atoms in the near-surface region of Cd-Te crystals. The observed Hg profile indicates that the concentration of Hg atoms at the surface reaches 4 x 10 to the 20th/cu cm; this distribution is interpreted by a simple diffusion model with a constant diffusion coefficient in the crystal and a constant concentration of Hg at the crystal surface. The temperature dependence of the diffusion coefficient is determined. Hg diffusion does not occur for CdTe immersed in Hg which contains a small amount of Cd. These results suggest that the rate of Hg diffusion is controlled by the diffusion of a Cd vacancy which is introduced by the out diffusion of Cd from CdTe crystals.

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