Physics – Computational Physics
Scientific paper
1998-10-02
Physics
Computational Physics
13 pages, 5 figures
Scientific paper
We have studied the driving forces governing reconstructions on polar GaN surfaces employing first-principles total-energy calculations. Our results reveal properties not observed for other semiconductors, as for example a strong tendency to stabilize Ga-rich surfaces. This mechanism is shown to have important consequences on various surface properties: Novel and hitherto unexpected structures are stable, surfaces may become metallic although GaN is a wide-bandgap semiconductor, and the surface energy is significantly higher than for other semiconductors. We explain these features in terms of the small lattice constant of GaN and the unique bond strength of nitrogen molecules.
Neugebauer Joerg
Northrup John E.
Scheffler Marc
Zywietz T. K.
No associations
LandOfFree
Novel Reconstruction mechanisms: A comparison between group-III-nitrides and "traditional" III-V-semiconductors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Novel Reconstruction mechanisms: A comparison between group-III-nitrides and "traditional" III-V-semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Novel Reconstruction mechanisms: A comparison between group-III-nitrides and "traditional" III-V-semiconductors will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-342143