Novel photon detection based on electronically induced stress in silicon

Details Novel photon detection based on electronically induced stress in silicon Novel photon detection based on electronically induced stress in silicon

Jul 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3379..173d&link_type=abstract

Proc. SPIE Vol. 3379, p. 173-181, Infrared Detectors and Focal Plane Arrays V, Eustace L. Dereniak; Robert E. Sampson; Eds.

Physics

2

Scientific paper

The feasibility of microcantilever-based optical detection is demonstrated. Specifically, we report here on an evaluation of laboratory prototypes that are based on commercially available microcantilevers. In this work, optical transduction techniques were used to measure microcantilever response to photons and study the electronic stress in silicon microcantilevers, and their temporal and photometric response. The photo-generation of free charge carriers (electrons, holes) in a semiconductor gives rise to photo-induced (electronic) mechanical strain. The excess charge carriers responsible for the photo-induced stress, were produced via photon irradiation from a diode laser with wavelength (lambda) equals 780 nm. We found that for silicon, the photo-induced stress results in a contraction of the crystal lattice due to the presence of excess electron-hole-pairs. In addition, the photo-induced stress is of opposite direction and about four times larger than the stress resulting from direct thermal excitation. When charge carriers are generated in a short time, a very rapid deflection of the microcantilever is observed (response time approximately microseconds).

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