Physics
Scientific paper
Dec 1993
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993spie.2021..149s&link_type=abstract
Proc. SPIE Vol. 2021, p. 149-159, Growth and Characterization of Materials for Infrared Detectors, Randolph E. Longshore; Jan W.
Physics
Scientific paper
We report on the observation of normal incidence IR photoconductive detector response in ellipsoidal valley n-type GaSb-AlSb multi-quantum well samples, grown on (001) GaAs substrates by molecular beam epitaxy. Photoconductors were fabricated and IR detector response was measured using Fourier transform IR spectroscopy. Detector response was observed in the long wavelength IR band at (lambda) equals 8.5 micrometers for an operating temperature of T equals 77 K, and agrees well with absorption data. We also show preliminary results on a method for extending the intersubband transition energies to longer wavelength.
Brar Berinder
Kroemer Herbert
Samoska Lorene A.
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