Physics
Scientific paper
Nov 2001
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2001spie.4454...94c&link_type=abstract
Proc. SPIE Vol. 4454, p. 94-105, Materials for Infrared Detectors, Randolph E. Longshore; Ed.
Physics
Scientific paper
In the presence of a time-dependent external source such as a bias electric field, an incident optical flux, or the temperature, electrons in quantum well devices experience non-adiabatic transport through the barrier layer between two adjacent quantum wells. This non-adiabatic transport process induces charge density fluctuations within each quantum well, resulting in several seemingly unrelated transient phenomena. When a time-dependent electric field is applied to the system, a dynamical breakdown and a zero-bias residual dark current in the quantum-well photodetectors are predicted theoretically. If a chopped time-dependent optical flux is incident on the system, a dynamical drop in the photo-responsivity with increasing chopping frequency and an emission-current spike as the optical shutter is opened are predicted. Finally, as the device temperature is varied with time, a counter-clockwise thermal hysteresis is found theoretically in the dark current curve as a function of the changing temperature. Experimental confirmation of the above theoretical predictions is presented.
Cardimona David A.
Huang Danhong
Morath Christian P.
Norton Hillary E.
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