Noise characteristics of Cryo-SiCMOS multiplexed FPA readouts below 30 K

Details Noise characteristics of Cryo-SiCMOS multiplexed FPA readouts below 30 K Noise characteristics of Cryo-SiCMOS multiplexed FPA readouts below 30 K

Sep 1990

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1990spie.1308..325k&link_type=abstract

IN: Infrared detectors and focal plane arrays; Proceedings of the Meeting, Orlando, FL, Apr. 18, 19, 1990 (A91-36726 15-35). Bel

Physics

Cryogenic Equipment, Field Effect Transistors, Focal Plane Devices, Low Temperature Tests, Multiplexing, Signal To Noise Ratios, Silicon Transistors, Boundary Conditions, Cryogenic Temperature, Data Acquisition, Noise Reduction, Silicon Radiation Detectors

Scientific paper

This paper explores the noise characteristics of a 20 x 64 element cryo-SiCMOS multiplexed FPA readout of the switched MOSFET type over the temperature range 8-30 K. Both subtractive double sampling and correlated double sampling techniques were used to probe the multiplexer's output waveform during static and dynamic operation. The rms noise was observed to be a weak, decreasing function of temperature over the ranges 8-19 K and 24-30 K, while the apparent noise was excessively high in the region 19-24 K, owing to a device instability that is attributed to a fundamental property of silicon-based cryo-MOSFETs.

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