Ni+-irradiated InGaAs/GaAs quantum wells: picosecond carrier dynamics

Details Ni+-irradiated InGaAs/GaAs quantum wells: picosecond carrier dynamics Ni+-irradiated InGaAs/GaAs quantum wells: picosecond carrier dynamics

May 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005njph....7..131d&link_type=abstract

New Journal of Physics, Volume 7, Issue 1, pp. 131 (2005).

Physics

2

Scientific paper

Room-temperature carrier dynamics as functions of heavy-ion implantation and subsequent thermal annealing were investigated for technologically important InGaAs/GaAs quantum wells (QWs) by means of a time-resolved up-conversion method. Sub-picosecond lifetimes were achieved at 10 MeV Ni+ doses of (20 50) × 1010 ions cm-2. The decay rates reached a maximum at the highest irradiation dose, yielding the shortest lifetime of the confined QW states of 600 fs. A simple theoretical model is proposed for the photodynamics of the carriers. The relaxation rate depended on the irradiation dose according to a power law of 1.2, while the irradiated and subsequently annealed samples exhibited a power law of 0.35. The results are qualitatively interpreted.

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