New unorthodox semiconductor devices

Details New unorthodox semiconductor devices New unorthodox semiconductor devices

Dec 1985

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1985rpph...48.1595b&link_type=abstract

Reports on Progress in Physics (ISSN 0034-4885), vol. 48, Dec. 1985, p. 1595-1635.

Physics

4

Semiconductor Devices, Technology Assessment, Transistors, Bipolar Transistors, Heterojunction Devices, Impurities, P-N Junctions, Quantum Wells, Schottky Diodes, Silicon, Thermionic Emitters

Scientific paper

A range of new semiconductor devices, including a number of structures which rely entirely upon new phenomena, are discussed. Unipolar two-terminal devices, including impurity-controlled barriers and graded composition barriers, are considered, as are new transistor structures, including the hot-electron camel transistor, the planar-doped barrier transistor, the thermionic emission transistor, and the permeable base transistor. Regenerative switching devices are addressed, including the metal-tunnel insulator-semiconductor switch, the polysilicon switch, MIS, and MISIM switching structures, and the triangular-barrier switch. Heterostructure devices are covered, including the heterojunction bipolar transistor, the selectively doped heterojunction transistor, heterojunction lasers, and quantum-well structures.

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