Negative capacitance in organic semiconductor devices: bipolar injection and charge recombination mechanism

Details Negative capacitance in organic semiconductor devices: bipolar injection and charge recombination mechanism Negative capacitance in organic semiconductor devices: bipolar injection and charge recombination mechanism

2007-06-26

arxiv.org/abs/0706.3933v1

Applied Physics Letters, Vol. 91, 012112 (2007)

Physics

Chemical Physics

3 pages, 3 figures, accepted for publication in Applied Physics Letters

Scientific paper

10.1063/1.2752024

We report negative capacitance at low frequencies in organic semiconductor based diodes and show that it appears only under bipolar injection conditions. We account quantitatively for this phenomenon by the recombination current due to electron-hole annihilation. Simple addition of the recombination current to the well established model of space charge limited current in the presence of traps, yields excellent fits to the experimentally measured admittance data. The dependence of the extracted characteristic recombination time on the bias voltage is indicative of a recombination process which is mediated by localized traps.

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