Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC

Details Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC

Dec 2010

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2010njph...12l5009p&link_type=abstract

New Journal of Physics, Volume 12, Issue 12, pp. 125009 (2010).

Physics

Scientific paper

The atomic force microscope (AFM) is used to study the morphology of graphene grown on 4H-SiC(000{\bar{1}}). A mesh-like network of ridges with high curvature is revealed that bound atomically flat, tile-like facets of few-layer graphene (FLG). To further study the structural properties of the ridge network, nanomanipulation experiments are performed using an AFM tip to deform the ridges in both the vertical and lateral directions. From these experiments, evidence is obtained that the ridges can be displaced in both the vertical and lateral directions. In some instances, ridges are found to return to their original shape after deformation. Cross-section transmission electron microscopy (TEM) studies show that the ridges are formed by the delamination of FLG from the SiC substrate.

Affiliated with

Also associated with

No associations

Rating

Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1309637