Nanolasers grown on silicon

Physics – Optics

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

submitted to Nature Photonics

Scientific paper

Integration of optical interconnects with silicon-based electronics can address the growing limitations facing chip-scale data transport as microprocessors become progressively faster. However, material lattice mismatch and incompatible growth temperatures have fundamentally limited monolithic integration of lasers onto silicon substrates until now. Here, we use a novel growth scheme to overcome this roadblock and directly grow on-chip InGaAs nanopillar lasers, demonstrating the potency of bottom-up nano-optoelectronic integration. Unique helically-propagating cavity modes are employed to strongly confine light within subwavelength nanopillars despite low refractive index contrast between InGaAs and silicon. These modes thereby provide an avenue for engineering on-chip nanophotonic devices such as lasers. Nanopillar lasers are as-grown on silicon, offer tiny footprints and scalability, and are thereby particularly suited to high-density optoelectronics. They may ultimately form the basis of the missing monolithic light sources needed to bridge the existing gap between photonic and electronic circuits.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Nanolasers grown on silicon does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Nanolasers grown on silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanolasers grown on silicon will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-285152

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.