Nanocrystal indium doped zinc oxide prepared by spray pyrolysis method

Physics

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Ii-Vi Semiconductors, Ii-Vi Semiconductors, Methods Of Deposition Of Films And Coatings, Film Growth And Epitaxy, Defects And Impurities: Doping, Implantation, Distribution, Concentration, Etc., Ii-Vi Semiconductors

Scientific paper

Thin films of indium-doped zinc oxide have been prepared by spray pyrolysis of the methanol solution of zinc acetate on heated substrates. As prepared films show hexagonal wurtzite nanocrystal structure. The films have 90 % transmission for wavelength more than 550 nm, but the conductivity depends from the indium doping. Thickness of 500 nm of the films was estimated from the interference fingers on the transmission spectra. Optical band gap showed dependence from indium-doped of the films. As deposited ZnO:In, by 3.5% of indium have a conductivity 2×102 Ω-1cm-1.

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