Muonium emission into vacuum from mesoporous thin films at cryogenic temperatures

Details Muonium emission into vacuum from mesoporous thin films at cryogenic temperatures Muonium emission into vacuum from mesoporous thin films at cryogenic temperatures

2011-12-20

arxiv.org/abs/1112.4887v1

Physics

Atomic Physics

5 pages, 5 Figures

Scientific paper

We report on Muonium (Mu) emission into vacuum following {\mu}+ implantation in mesoporous thin SiO2 films. We obtain a yield of Mu into vacuum of (38\pm4)% at 250 K temperature and (20\pm4)% at 100 K for 5 keV {\mu}+ implantation energy. From the implantation energy dependence of the Mu vacuum yield we determine the Mu diffusion constants in these films: D250KMu = (1.6 \pm 0.1) \times 10-4 cm2/s and D100KMu = (4.2\pm0.5)\times10-5 cm2/s. Describing the diffusion process as quantum mechanical tunneling from pore-to-pore, we reproduce the measured temperature dependence T^3/2 of the diffusion constant. We extract a potential barrier of (-0.3 \pm 0.1) eV which is consistent with our computed Mu work-function in SiO2 of [-0.3,-0.9] eV. The high Mu vacuum yield even at low temperatures represents an important step towards next generation Mu spectroscopy experiments.

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