Multilayer X-ray optics produced by atomic layer epitaxy

Details Multilayer X-ray optics produced by atomic layer epitaxy Multilayer X-ray optics produced by atomic layer epitaxy

Nov 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989spie.1159..664s&link_type=abstract

IN: EUV, X-ray, and gamma-ray instrumentation for astronomy and atomic physics; Proceedings of the Meeting, San Diego, CA, Aug.

Physics

Atomic Physics

Epitaxy, Film Thickness, Monomolecular Films, Superlattices, Thin Films, Vapor Deposition, Cadmium Sulfides, Organometallic Compounds, X Rays, Zinc Selenides

Scientific paper

Atomic layer epitaxy (ALE) has been investigated as an alternative to the currently used thin film deposition techniques. ALE is believed to produce multilayer X-ray optics (MXOs) with smooth, uniform layers and very small d-spacings (i.e., less than about twelve angstroms). Two types of ALE have been considered: ALE using molecular beam epitaxy (ALE/MBE) and ALE using chemical vapor deposition (ALE/CVD). It has been suggested that ALE/CVD is the better technique for depositing the required multilayers, especially when the metal-organic compounds are volatile, in which case the deposition is denoted as ALE/MOCVD. The compounds can be deposited at relatively low temperatures, and allow photoassisted deposition for producing patterned structures. The design of an ALE/MOCVD reactor is also discussed.

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