Multicolor 4- to 20-um InP-based quantum well infrared photodetectors

Physics

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Scientific paper

In order to tune the wavelength of lattice-matched QWIP detectors over the range from 4 - 20 microns, new designs are demonstrated for the first time which combine InGaAlAs and InGaAsP layers lattice-matched to InP and grown by gas-source molecular beam epitaxy. We demonstrate the first long- wavelength quantum well infrared photodetectors using the lattice-matched n-doped InGaAlAs/InP materials system. Samples with AlAs mole fractions of 0.0, 0.1, and 0.15 result in cutoff wavelengths of 8.5, 13.3, and 19.4 micrometer, respectively. A 45 degree facet coupled illumination responsivity of R equals 0.37 A/W and detectivity of D*(subscript (lambda) ) equals 1 X 10(superscript 9) cm (root)Hz W(superscript -1) at T equals 77 K, for a cutoff wavelength (lambda) (subscript c) equals 13.3 micrometer have been achieved. Based on the measured intersubband photoresponse wavelength, a null conduction band offset is expected for In(subscript 0.52)Ga(subscript 0.21)Al(subscript 0.27)As/InP heterojunctions. We also report quantum well infrared photodetector structures of In(subscript 0.53)Ga(subscript 0.47)As/Al(subscript 0.48)In(subscript 0.52)As grown on InP substrate with photoresponse at 4 micrometer suitable for mid-wavelength infrared detectors. These detectors exhibit a constant peak responsivity of 30 mA/W independent of temperature in the range from T equals 77 K to T equals 200 K. Combining these two materials, we report the first multispectral detectors that combine lattice-matched quantum wells of InGaAs/InAlAs and InGaAs/InP. Utilizing two contacts, a voltage tunable detector with (lambda) (subscript p) equals 8 micrometer at a bias of V equals 5 V and (lambda) p equals 4 micrometer at V equals 10 V is demonstrated.

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