Morphology of Thick SiC Epitaxial Films Grown by the Physical Vapor Transport Method

Details Morphology of Thick SiC Epitaxial Films Grown by the Physical Vapor Transport Method Morphology of Thick SiC Epitaxial Films Grown by the Physical Vapor Transport Method

Apr 2008

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008jemat..37..379w&link_type=abstract

Journal of Electronic Materials, Volume 37, Issue 4, pp.379-383

Physics

Sic, Pvt, Morphology, Afm

Scientific paper

Epitaxial SiC films were deposited on on-axis Si-face 4H-SiC(0001) substrates by the physical vapor transport (PVT) method from a SiC powder. Scanning electron microscopy (SEM) showed a surface morphology which did not have any observable growth defects or cracking. We observed hexagonal growth morphology, a typical characteristic of diffusional growth. River patterns, free from microbubbles and microvoids, were observed on the as-grown surface. Morphology observed at 45° tilt in SEM revealed growth steps and coarsening of grains. An X-ray diffraction (XRD) rocking curve measured the full-width at half-maximum (FWHM) as 51.0 arc seconds and a reciprocal space map showed a singular intense region that is attributed to the high-quality homoepitaxial SiC film.

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