Monolithic Sensors in Deep Submicron CMOS Technology for Low Material Budget, High Rate HEP Applications

Details Monolithic Sensors in Deep Submicron CMOS Technology for Low Material Budget, High Rate HEP Applications Monolithic Sensors in Deep Submicron CMOS Technology for Low Material Budget, High Rate HEP Applications

Jun 2008

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008apsp.conf...18a&link_type=abstract

ASTROPARTICLE, PARTICLE AND SPACE PHYSICS, DETECTORS AND MEDICAL PHYSICS APPLICATIONS. Proceedings of the 10th Conference. Held

Physics

Medical Physics

Maps, Cmos Deep Submicron, Sparsified Digital Readout

Scientific paper

This work aims at discussing the development of monolithic active pixel sensors (MAPS), which are considered as possible candidate detectors for the inner layers at the future large colliders. In such devices the triple well option, available in deep submicron CMOS technologies, is exploited to implement analog and digital signal processing at the pixel level. In this scheme, the charge collecting electrode is laid out using a deep n-well (DNW) and a full readout chain for capacitive detectors is integrated in the elementary cell. In particular, this work is concerned with the design and performance of DNW monolithic sensor prototypes fabricated in a 130 nm CMOS technology, including different test structures and performing pixel-level charge amplification, shaping and data sparsification.

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