Monolithic integration of InGaAs/InP JFET/detectors for NIR imaging applications

Details Monolithic integration of InGaAs/InP JFET/detectors for NIR imaging applications Monolithic integration of InGaAs/InP JFET/detectors for NIR imaging applications

Jun 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2745...55l&link_type=abstract

Proc. SPIE Vol. 2745, p. 55-68, Infrared Readout Electronics III, Eric R. Fossum; Ed.

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Monolithic arrays of InP JFET switches and InGaAs detectors have been demonstrated with unprecedented JFET leakages below 20 pA. Improvements in the JFET dark current resulted from reduced device geometry along with the use of a novel reversed bias p-n junction. Successful devices have been made both with OMVPE and gas source MBE crystal. Other impressive results with column-switched 16 X 16 element arrays include detector leakages below 1 nA, 70 percent quantum efficiency from 1.0 - 1.65 micrometers and ON/OFF ratios beyond 70 db.

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