Mole Fraction Dependence of Mobility in InxGa1-xN Alloys

Details Mole Fraction Dependence of Mobility in InxGa1-xN Alloys Mole Fraction Dependence of Mobility in InxGa1-xN Alloys

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..670y&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 670-670 (2007).

Physics

Conductivity Phenomena In Semiconductors And Insulators

Scientific paper

Hall effect measurements was carried out at room temperature in three
InxGa1-xN alloys. We have performed mobility curves as a function of In
content. The effect of alloy scattering to mobility has been
investigated in these samples.

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