Modulation of the band-structure of defective single-wall carbon nanotubes under a transverse electric field

Details Modulation of the band-structure of defective single-wall carbon nanotubes under a transverse electric field Modulation of the band-structure of defective single-wall carbon nanotubes under a transverse electric field

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..718i&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 718-718 (2007).

Physics

1

Electronic Structure Of Nanoscale Materials: Clusters, Nanoparticles, Nanotubes, And Nanocrystals, Fullerenes And Related Materials, Intercalation Compounds, Nanoparticles

Scientific paper

Ab initio calculations show that the direction, not only the strength of the applied transverse electric field, determines the modulation of the band-structure of semiconducting carbon nanotubes with vacancy defects. The defect distribution (concentration and mutual orientation of the defects) contribute to the properties of the (10,0) single-wall carbon nanotubes through the defect-defect interaction.

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