Moderate temperature detector development

Details Moderate temperature detector development Moderate temperature detector development

Dec 1981

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1981heoc.rept.....m&link_type=abstract

Final Technical Report, Sep. 1979 - May 1980 Honeywell Electro-Optics Center, Lexington, MA.

Physics

Optics

Infrared Detectors, Mercury Cadmium Tellurides, Photodiodes, Product Development, Semiconductor Junctions, Temperature Dependence, Anodizing, Energy Gaps (Solid State), Fabrication, Ion Implantation, Space Charge, Thickness, Wafers

Scientific paper

P-side backside reflecting constant, photodiode characterization, and photodiode diffusion and G-R currents were investigated in an effort to develop an 8 m to 12 m infrared quantum detector using mercury cadmium telluride. Anodization, phosphorus implantation, and the graded band gap concept were approaches considered for backside formation. Variable thickness diodes were fabricated with a back surface anodic oxide to investigate the effect of this surface preparation on the diffusion limited zero bias impedance. A modeling technique was refined to thoroughly model diode characteristics. Values for the surface recombination velocity in the depletion region were obtained. These values were improved by implementing better surface damage removal techniques.

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