Modelling of Raman amplification in silicon-on-insulator optical microcavities

Details Modelling of Raman amplification in silicon-on-insulator optical microcavities Modelling of Raman amplification in silicon-on-insulator optical microcavities

Feb 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007njph....9...25d&link_type=abstract

New Journal of Physics, Volume 9, Issue 2, pp. 25 (2007).

Physics

2

Scientific paper

In this paper, the detailed modelling of Raman amplification in silicon-on-insulator (SOI) guided-wave resonant microcavities is developed for the first time. Theoretical results are compared with experiments in literature for either racetrack or microdisk resonators, demonstrating very good agreement. Investigation of resonant microcavity parameters, including pump and Stokes coupling factors and cavity lengths, is presented and their influence on pump enhancement factor is discussed. Design criteria are derived for both CW Raman lasers and pulsed Raman amplifiers.

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