Statistics – Computation
Scientific paper
May 2007
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007jcrgr.303..318m&link_type=abstract
Journal of Crystal Growth, Volume 303, Issue 1, p. 318-322.
Statistics
Computation
Iii-V Semiconductors, Growth From Vapor, Chemical Vapor Deposition, Vapor Phase Epitaxy, Growth From Vapor Phase, Computational Modeling, Simulation, Chemistry Of Mocvd And Other Vapor Deposition Methods
Scientific paper
The modelling and subsequent experimental validation of nitride growth processes in commercial, production scale multi-wafer reactors is investigated with focus on group-III nitride compounds GaN and InGaN. The paper also deals with the development of group-III nitride growth processes at elevated process pressures, highlighting the effects of gas-phase nucleation phenomena on the growth efficiency of GaN. In addition, the latest hardware and process improvements to the Planetary Reactor® technology are presented, with focus on the development using a modelling approach, of a new gas injector design for III-nitride growth. Subsequent experimental validation of the new injector design, and its flexibility to changing process regimes for GaN and InGaN will be demonstrated for the 42×2″ Planetary Reactor®.
Boyd A. R.
Dauelsberg M.
Heuken Michael
Kondratyev A. V.
Martin Chris
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