Physics
Scientific paper
Oct 1989
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989spie.1107...32t&link_type=abstract
IN: Infrared detectors, focal plane arrays, and imaging sensors; Proceedings of the Meeting, Orlando, FL, Mar. 30, 31, 1989 (A90
Physics
Finite Difference Theory, Gamma Ray Bursts, Infrared Detectors, P-N Junctions, Photoconductors, Radiation Effects, Carrier Density (Solid State), Iterative Solution, Minority Carriers, Photovoltaic Effect, Recombination Reactions
Scientific paper
Signal-decay functions dependent on diode material and geometry have been generated by exposures of cooled photovoltaic diode (PVD) arrays to 25 nsec bursts of 1-2 meV gamma radiation. An effort is made to formulate a diode transient-response model able to correlate PVD transient decay behavior with diode design parameters, and thereby furnish a basis for the design of PVD arrays exhibiting the desired characteristics. The experimentally observed decay functions may have been associated with charge-carrier transient production and subsequent diffusion into the p-n junctions; the use of a charge-carrier thermal-diffusion model therefore appeared appropriate, and was subsequently found to produce voltage decay results in agreement with test data.
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