Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors

Details Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors

Jan 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007jcrgr.298..418d&link_type=abstract

Journal of Crystal Growth, Volume 298, p. 418-424.

Statistics

Computation

2

Iii-V Semiconductors, Growth From Vapor, Chemical Vapor Deposition, Computational Modeling, Simulation, Chemistry Of Mocvd And Other Vapor Deposition Methods

Scientific paper

The metalorganic vapor-phase epitaxy (MOVPE) growth of GaN from TMGa and NH3 at higher process pressures up to near-atmospheric pressure in commercial production scale multi-wafer reactors is investigated. The Planetary Reactor® and close coupled showerhead reactor are compared and their suitability for near-atmospheric pressure growth is demonstrated. Advanced model development and its validation by growth experiments are carried out with particular emphasis on gas phase reaction kinetics and nucleation dynamics. Both are recognized to be crucial for nitride MOVPE at elevated pressures. Process and reactor design improvements to enhance growth efficiency of GaN at elevated pressures are discussed and the physical origin of the pressure dependence of growth efficiency is analyzed. Model predictions and growth experiments are in good agreement.

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